Issue 64, 2018, Issue in Progress

Preparation of high-concentration substitutional carbon-doped TiO2 film via a two-step method for high-performance photocatalysis

Abstract

In this paper, we present a facile two-step method for preparing a high-concentration substitutional carbon-doped TiO2 (TiO2−xCx) film. First, the titanium substrate undergoes gas carburizing, followed by micro-arc oxidation (MAO) to form a carbon-doped TiO2 film on the surface. The process can be described as direct oxidation of titanium carbide (O→TiCx). The experimental results reveal that compared with traditional thermal annealing, this process could increase the carbon doping concentration to 6.07 at% and x to 0.24 in TiO2−xCx. The TiO2−xCx film exhibits a significant red-shift in the band-gap transition, a narrow band gap of 2.77 eV, and excellent photocatalytic performance, more than two times higher than that of undoped TiO2 film. This method is simple, efficient, economical, environmentally friendly, and adapts to mass production. This experimental strategy can also be used in preparing other doped elements.

Graphical abstract: Preparation of high-concentration substitutional carbon-doped TiO2 film via a two-step method for high-performance photocatalysis

Article information

Article type
Paper
Submitted
24 Aug 2018
Accepted
17 Oct 2018
First published
30 Oct 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 36691-36696

Preparation of high-concentration substitutional carbon-doped TiO2 film via a two-step method for high-performance photocatalysis

J. Wu, X. Jiang, Y. Zhang, Q. Fu and C. Pan, RSC Adv., 2018, 8, 36691 DOI: 10.1039/C8RA07082B

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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