Fabrication of Cu2ZnSn(S,Se)4 photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

Pengpeng Zhang; Qing Yu; Xue Min; Linbao Guo; Jiangjian Shi; Xiangyun Zhao; Dongmei Li; Yanhong Luo; Huijue Wu; Qingbo Meng; Sixin Wu

doi:10.1039/C7RA13069D

Fabrication of Cu₂ZnSn(S,Se)₄ photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films†

Pengpeng Zhang,^ab Qing Yu,^ab Xue Min,^ab Linbao Guo,^ab Jiangjian Shi,^a Xiangyun Zhao,^c Dongmei Li,^ab Yanhong Luo,^ab Huijue Wu,^a Qingbo Meng

*^ab and Sixin Wu*^c

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* Corresponding authors

^a Key Laboratory for Renewable Energy (CAS), Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
E-mail: qbmeng@iphy.ac.cn

^b School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

^c The Key Laboratory for Special Functional Materials of MOE, Henan University, Kaifeng, Henan 475004, China
E-mail: wusixin@henu.edu.cn

Abstract

The annealing temperature of solution-processed Cu₂ZnSn(S,Se)₄ (CZTSSe) precursor films has been carefully optimized for favorable selenization. At higher temperature, more solvent will be removed, and the crystallinity of the precursor films can be improved. It is found that, although the crystallinity of selenized film is continuously enhanced by increasing the temperature, a dense CZTSSe film with round and large grains can only be achieved at medium high temperature ranging from 350 to 400 °C. Further investigation reveals that, in this regime, the carrier and defect densities are obviously reduced, leading to average photoelectric conversion efficiency (PCE) improved from 5.1% to 9.4%. An optimal annealing temperature of 380 °C is obtained and up to 10.04% of photoelectric conversion efficiency has been achieved.

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Fabrication of Cu₂ZnSn(S,Se)₄ photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films†

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Fabrication of Cu₂ZnSn(S,Se)₄ photovoltaic devices with 10% efficiency by optimizing the annealing temperature of precursor films

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