Herein, we proposed a novel hybrid nanostructure comprising unique star-shaped GaN nanowires with Si nanoworms having drifting Au nanoparticles inside. Both nanostructures were simultaneously grown using a MOCVD chamber. Intentional stain was induced while growing the star-shaped GaN nanowires to achieve this new nanostructure. A planned experimental environment was deliberated to facilitate the simultaneous growth of the Si nanoworms along with the star-shaped GaN nanowires. After the growth process, various characterization techniques were applied to study the crystallinity and structural and optical properties of the hybrid structure. The growth mechanisms for both structures were also systematically investigated. It was found that a high concentration of the n-dopant source drives the growth of the star-shaped GaN nanowires by suppressing the lateral growth at the high dopant-concentrated vertices of the conventional hexagonal-shaped GaN nanowires. On the other hand, a surplus amount of the same dopant source assists the Si nanoworms to grow. Si nanoworms follow the base-growth mechanism, in which after a while, the Au nanoparticles start to drift inside the Si nanoworms. Finally, the photocurrent of the hybrid structure was measured and compared with that of the star-shaped GaN nanowires only. It is concluded from the photocurrent measurements that the grown hybrid structure is a better candidate for future optoelectronic devices.