Smooth CH3NH3PbI3 from controlled solid–gas reaction for photovoltaic applications

Jian Mao; Hong Zhang; Hexiang He; Haifei Lu; Fengxian Xie; Di Zhang; Kam Sing Wong; Wallace C. H. Choy

doi:10.1039/C5RA12530H

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Smooth CH₃NH₃PbI₃ from controlled solid–gas reaction for photovoltaic applications†

Jian Mao,^a Hong Zhang,^a Hexiang He,^b Haifei Lu,^a Fengxian Xie,^a Di Zhang,^a Kam Sing Wong^b and Wallace C. H. Choy*^a

Author affiliations

* Corresponding authors

^a Department of Electrical and Electronic Engineering, The University of Hong Kong, Pok Fu Lam Road, Hong Kong, China
E-mail: chchoy@eee.hku.hk

^b Department of Physics, The Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong, China

Abstract

The merits of high power conversion efficiency (PCE) and easy preparation make organic–inorganic perovskite solar cells one of the most promising solar devices. However, PCE is greatly dependent on the morphology of perovskite thin film. Here, we report a solid–gas reaction method to fabricate very smooth CH₃NH₃PbI₃ thin film with high coverage. Through controlling the reaction rate between CH₃NH₃I and PbI₂ by tuning the PbI₂ substrate temperature and the evaporation rate of CH₃NH₃I, we obtain a CH₃NH₃PbI₃ layer with roughness of 7.37 nm. Besides, no post-treatment annealing is needed after film formation using our approach. With about 250 nm perovskite active layer, the solar cells exhibit a PCE of 10.0% with little hysteresis.

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Article information

DOI: https://doi.org/10.1039/C5RA12530H
Article type: Paper
Submitted: 29 Jun 2015
Accepted: 20 Aug 2015
First published: 20 Aug 2015

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RSC Adv., 2015,5, 73760-73766

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Smooth CH₃NH₃PbI₃ from controlled solid–gas reaction for photovoltaic applications

J. Mao, H. Zhang, H. He, H. Lu, F. Xie, D. Zhang, K. S. Wong and W. C. H. Choy, RSC Adv., 2015, 5, 73760 DOI: 10.1039/C5RA12530H

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