Issue 10, 2015
From the journal:

Nanoscale

Optimized growth of graphene on SiC: from the dynamic flip mechanism

Dandan Wang,ab   Lei Liu, ORCID logo *a   Wei Chen,*cd   Xiaobo Chen,e   Han Huang,cf   Jun He,f   Yuan-Ping Feng,c   A. T. S. Weec  and  D. Z. Shena  

* Corresponding authors

a State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, People's Republic of China
E-mail: liulei@ciomp.ac.cn

b University of Chinese academy of sciences, Beijing 100039, People's Republic of China

c Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore
E-mail: phycw@nus.edu.sg

d Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore

e University of Missouri - Kansas City, Department of Chemistry, Kansas City, MO 64110, USA

f School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, Changsha 410083, China

Abstract

Thermal decomposition of single-crystal SiC is one of the popular methods for growing graphene. However, the mechanism of graphene formation on the SiC surface is poorly understood, and the application of this method is also hampered by its high growth temperature. In this study, based on the ab initio calculations, we propose a vacancy assisted Si–C bond flipping model for the dynamic process of graphene growth on SiC. The fact that the critical stages during growth take place at different energy costs allows us to propose an energetic-beam controlled growth method that not only significantly lowers the growth temperature but also makes it possible to grow high-quality graphene with the desired size and patterns directly on the SiC substrate.

Graphical abstract: Optimized growth of graphene on SiC: from the dynamic flip mechanism

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Article information

DOI
https://doi.org/10.1039/C4NR07197B
Article type
Paper
Submitted
05 Dec 2014
Accepted
02 Feb 2015
First published
03 Feb 2015

Nanoscale, 2015,7, 4522-4528

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Optimized growth of graphene on SiC: from the dynamic flip mechanism

D. Wang, L. Liu, W. Chen, X. Chen, H. Huang, J. He, Y. Feng, A. T. S. Wee and D. Z. Shen, Nanoscale, 2015, 7, 4522 DOI: 10.1039/C4NR07197B

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