Comptes Rendus
Physics/Solids, fluids: magnetic and electrical properties
Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide
[Effet du champ magnétique sur la longueur de localisation dans n-type CuInSe2]
Comptes Rendus. Physique, Volume 8 (2007) no. 7-8, pp. 942-947.

La conduction par saut à distance variable de type Mott où la magnétorsistance suit la relation ρ(B)=ρoexp[To(B)/T]1/4, est observée dans n-CuInSe2 en dessous de 20 K pour un champ magnétique B allant jusqu'à 35 T. L'effet de B sut la température caractéristique To et sur la longueur de localisation ξ est expliqué à l'aide des modèles théoriques existants mais pour B< 10 T. Pour B> 10 T, la magnétorésistance présente un comportement de saturation. Cependant, les variations de To et ξ avec B sont en accord avec la théorie lorsqu'on considère les données obtenues par extrapolation des courbes Lnρ(B)/ρ(0) en fonction de B1/3. Ceci suggère que le désaccord observé au dessus de 10 T est lié à la saturation de la magnétoprésistance. L'origine de cette saturation n'est pas encore claire.

Variable range hopping conduction of the Mott type, where the magnetoresistance follows the relation ρ(B)=ρoexp[To(B)/T]1/4, is observed in n-type CuInSe2 below 20 K at different magnetic field values up to 35 T. The field dependence of the localization temperature To and localization length ξ can be explained with the existing theoretical models but only up to 10 T. In the high field regime, above 10 T, the magnetoresistance shows a tendency to saturate. However, excellent agreement with the theory of the variation of the hopping parameters To and ξ with B is found up to 35 T from the analysis of the interpolated magnetoresistance data obtained from the linearly extrapolated plot of Lnρ(B)/ρ(0) against B1/3. This suggests that the departure of To and ξ from the expected variation with B above 10 T is due to the effect of saturation of the magnetoresistance whose origin is not yet clear.

Reçu le :
Accepté le :
Publié le :
DOI : 10.1016/j.crhy.2007.07.001
Keywords: Semiconductor, Variable range hopping, Magnetoresistance
Mot clés : Semi-conducteur, Saut à distance variable, Magnétorsistance

Lahcen Essaleh 1 ; Syed M. Wasim 2 ; Jean Galibert 3

1 Laboratoire de matière condensée et nanostructures (LMCN), université Cadi-Ayyad, faculté des sciences et techniques, département de physique, Guéliz, BP 549, Marrakech, Morocco
2 Centro de Estudios de Semiconductores, Facultad de Ciencias, Universidad de Los Andes, Merida 5101, Venezuela
3 Laboratoire national des champs magnétique pulsés, 143, avenue de Rangueil, BP 4245, 31432, Toulouse cedex 4, France
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     title = {Effect of the high magnetic field on the localization length in n-type {Cooper} {Indium} diselenide},
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Lahcen Essaleh; Syed M. Wasim; Jean Galibert. Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide. Comptes Rendus. Physique, Volume 8 (2007) no. 7-8, pp. 942-947. doi : 10.1016/j.crhy.2007.07.001. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2007.07.001/

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