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An Account of Natural Material-Based Nonvolatile Memory Device

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Abstract

The development in electronic sector has brought a remarkable change in the lifestyle of mankind. At the same time, this technological advancement results in adverse effect on environment due to the use of toxic and non-degradable materials in various electronic devices. With the emergence of environmental problems, the green, reprogrammable, biodegradable, sustainable and environmental-friendly electronic devices have become one of the best solutions for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Natural material has emerged as the promising candidate for the next generation of electronic devices due to its easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This review targets the characteristics, advancements, role, limitations, and prospects of using natural materials as the functional layer of a resistive switching memory device with a primary focus on the switching/memory properties. Among the available memory devices, resistive random access memory, write once read many unipolar memory, etc., devices have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. The motivation behind this work is to promote the use of natural materials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic devices.

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Acknowledgements

SAH is grateful to DST, for financial support to carry out this research work through DST, Govt. of India project ref. No. CRG/2021/004073. The authors are also grateful to UGC, Govt. of India for financial support to carry out this research work through financial assistance under UGC—SAP program 2016.

Funding

Syed Arshad Hussain reports financial support, administrative support, equipment, drugs, or supplies, statistical analysis, and writing assistance were provided by Tripura University. Syed Arshad Hussain reports a relationship with Department of Science and Technology, Govt. of India, UGC-SAP program 2016 that includes funding grants.

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  1. Department of Physics, Thin Film and Nanoscience Laboratory, Suryamaninagar, West Tripura, Agartala, Tripura, 799022, India

    Farhana Yasmin Rahman, Debajyoti Bhattacharjee & Syed Arshad Hussain

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Significance Statement: This paper is a review on resistive switching using natural materials. Such devices are very promising for future electronic application with sustainable solution toward e-waste. This paper has been submitted as a part of the special issue “Advances in Memory Material.”.

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Rahman, F.Y., Bhattacharjee, D. & Hussain, S.A. An Account of Natural Material-Based Nonvolatile Memory Device. Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci. 93, 497–510 (2023). https://doi.org/10.1007/s40010-023-00830-2

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