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Structural Defects in GaN and ZnO

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Oxide and Nitride Semiconductors

Part of the book series: Advances in Materials Research ((ADVSMATERIALS,volume 12))

Characteristics of the various kinds of structural defects in GaN and ZnO films and advances in techniques to reduce a dislocation density are presented. Heteroepitaxial GaN and ZnO films have various kinds of structural defects including misfit dislocations, threading dislocations, stacking faults, nanopipes, and inversion domain boundary, which inevitably affect the properties of the films and devices. Transmission electron microscopy of these defects is described in addition to discussions on basic characteristics of the defects. Many different technical approaches to reduce a dislocation density have been reported. Detailed techniques including epitaxial lateral over growth and employment of buffers that lead to the growth of high quality films with a low dislocation density are discussed.

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  1. School of Advanced Materials Science & Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-ku Suwon, 440-746, Korea

    H. K. Cho

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  1. Center for Interdisciplinary Research, Tohoku University, Aramaki Aza-Aoba, Aoba-ku, Sendai, 980-8578, Japan

    Takafumi Yao

  2. School of Nanoscience and Technology, Chungnam National University, Gung-dong 220, Youseong-gu, Daejeon, 305-764, Republic of Korea

    Soon-Ku Hong

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Hong, S.K., Cho, H.K. (2009). Structural Defects in GaN and ZnO. In: Yao, T., Hong, SK. (eds) Oxide and Nitride Semiconductors. Advances in Materials Research, vol 12. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-88847-5_6

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