Role of Oxygen at Screw Dislocations in GaN

I. Arslan and N. D. Browning
Phys. Rev. Lett. 91, 165501 – Published 14 October 2003

Abstract

Here we report the first direct atomic scale experimental observations of oxygen segregation to screw dislocations in GaN using correlated techniques in the scanning transmission electron microscope. The amount of oxygen present in each of the three distinct types of screw dislocation core is found to depend on the evolution and structure of the core, and thus gives rise to a varying concentration of localized states in the band gap. Contrary to previous theoretical predictions, the substitution of oxygen for nitrogen is observed to extend over many monolayers for the open core dislocation.

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  • Received 5 May 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.165501

©2003 American Physical Society

Authors & Affiliations

I. Arslan1 and N. D. Browning2,3

  • 1Department of Physics, University of California-Davis, 1 Shields Avenue, Davis, California 95616, USA
  • 2Department of Chemical Engineering and Materials Science, University of California-Davis, Davis, California 95616, USA
  • 3National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

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Issue

Vol. 91, Iss. 16 — 17 October 2003

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