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Chemical and Structural Features of Inherent and Process-Induced Defects in Oxidized Silicon

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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

Abstract

Major inherent and process-induced point defects in oxidized silicon wafers have been examined by electron spin resonance (ESR). The Pb center is found to occur in new variations in native-oxidized wafers. Furnace thermochemical treatments and, notably, the resultant oxide water disposition have a strong effect on the initial occurrence of Pb centers (main source of interface traps) and on Pb generation by electric fields or rapid thermal stress. Brief or gentle postoxidation anneals can have very significant effects on durable passivation. The radiochemical creation and annealing of implant-induced oxide point effects—the E′ (a charge trap), nonbridging oxygen hole center (NBOHC), and peroxy—are found to be generally similar, but not necessarily identical, to phenomena in well-studied bulk fused silica.

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Authors and Affiliations

  1. U.S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey, 07703, USA

    Edward H. Poindexter, Philip J. Caplan & Gary J. Gerardi

Authors
  1. Edward H. Poindexter
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  2. Philip J. Caplan
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  3. Gary J. Gerardi
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Editor information

Editors and Affiliations

  1. Stanford University, Stanford, California, USA

    C. Robert Helms

  2. Fairchild Research Center, National Semiconductor, Santa Clara, California, USA

    Bruce E. Deal

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Poindexter, E.H., Caplan, P.J., Gerardi, G.J. (1988). Chemical and Structural Features of Inherent and Process-Induced Defects in Oxidized Silicon. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_32

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  • DOI: https://doi.org/10.1007/978-1-4899-0774-5_32

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-0776-9

  • Online ISBN: 978-1-4899-0774-5

  • eBook Packages: Springer Book Archive

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