Abstract
Although many different crystal growth methods have been applied to the growth of widegap II–VI compounds, they failed to produce conductivity-type-controlled crystals. As shown in Table 13.1, ZnSe and most of the other widegap II–VI compounds showed n-type conductivity, but p-type crystals were not available even with heavy dopings of acceptor impurities. The exception was ZnTe, which showed only p-type conductivity. Because of these characteristics, injection light-emitting diodes (LED), laser diodes and other devices which needed p-n junctions were not realized in widegap II–VI compounds although they have direct bandgaps which have the potential to cause strong light emission.
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Nishizawa, Ji., Suto, K. (1992). Preparation of widegap II–VI homojunction devices by stoichiometry control. In: Ruda, H.E. (eds) Widegap II–VI Compounds for Opto-electronic Applications. Electronic Materials Series, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3486-0_13
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DOI: https://doi.org/10.1007/978-1-4615-3486-0_13
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