Site location of As⁺-ion-implanted GaAs by means of a multidirectional and high-depth-resolution Rutherford back-scattering/channelling technique

A detailed investigation of the site transfer of As⁺-implantation induced self-interstitial atoms has been performed by means of a high-depth resolution and multi-directional Rutherford back-scattering (RBS)/channelling technique. The first peak of the double-yield peak observed arises from the conventional disordered region around the projected range (R_p) and the newly observed second peak from the region deeper than R_p. The first peak has been found to be annealed through six stages. In the first two stages, isolated interstitial atoms are dominant, and recombine rapidly with nearby vacancies in stage II(T approximately 150 degrees C). The arsenic related interstitial structures of the split (100) di-interstitial/twin interstitialcy and the twin relaxed bond-centred interstitial have been confirmed as playing an important role at stages III to V (150<T<or approximately=350/400 degrees C) for both peaks. It is also suggested that a clustered split (100) interstitialcy will persist at temperatures higher than 450 degrees C.