Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
“The Solid-State Century”, Scientific American (Special issue), January 1998.
W. Shockley, “The Path to the Conception of the Junction Transistor”, IEEE Transactions on Electron Devices, Vol. ED-31, pp. 1523–1546, 1984.
J. Bardeen and W.H. Brattain, “The Transistor, A Semiconductor Triode”, Physical Review, Vol. 74, pp. 230–231, 1948.
W. Shockley, “The Theory of p–n Junctions in Semiconductors and p–n Junction Transistors”, Bell System Technical Journal, Vol. 28, pp. 435–489, 1949.
M.S. Adler et al., “The Evolution of Power Device Technology”, IEEE Transactions on Electron Devices, Vol. ED-31, pp. 1570–1591, 1984.
B.J. Baliga, “Enhancement and Depletion Mode Vertical Channel MOS Gated Thyristors”, Electronics Letters, Vol. 15, pp. 645–647, 1979.
B.J. Baliga et al., “The Insulated Gate Rectifier (IGR): A New Power Switching Device”, IEEE International Electron Devices Meeting, Abstract 10.6, pp. 264–267, 1982.
B.G. Streetman and S.K. Banerjee, “Solid State Electronic Devices”, 6th Edition, Prentice Hall, Englewood Cliffs, NJ, 2006.
S.M. Sze, “Physics of Semiconductor Devices”, 2nd Edition, pp. 265–270, Wiley, New York, 1981.
R. Mertens and R.J. Van Overstraeten, “Measurement of the Minority Carrier Parameters in Heavily Doped Silicon”, Solid-State Electronics, Vol. 19, pp. 857–862, 1976.
G.E. Possin, M.S. Adler, and B.J. Baliga, “Measurement of the p–n Product in Heavily Doped Epitaxial Emitters”, IEEE Transactions on Electron Devices, Vol. ED-31, pp. 3–17, 1984.
W.M. Webster, “On the Variation of Junction-Transistor Current Amplification Factor with Emitter Current”, Proceedings of the IRE, Vol. 42, pp. 914–916, 1954.
C.T. Kirk, “A Theory of Transistor Cut-Off Frequency Fall-Off at High Current Densities”, IEEE Transactions on Electron Devices, Vol. ED-9, pp. 164–174, 1966.
A. Blicher, “Field-Effect and Bipolar Power Transistor Physics”, pp. 140–143, Academic, San Diego, CA, 1981.
R.J. Hauser, “The Effects of Distributed Base Potential on Emitter-Current Injection Density and Effective Base Resistance for Stripe Transistor Geometries”, IEEE Transactions on Electron Devices, Vol. ED-11, pp. 238–242, 1964.
S.K. Ghandhi, “Semiconductor Power Devices”, pp. 157–161, Wiley, New York, 1977.
N.H. Fletcher, “Some Aspects of the Design of Power Transistors”, Proceedings of the IRE, pp. 551–559, 1955.
J.M. Early, “Effects of Space-Charge Layer Widening in Junction Transistors”, Proceedings of the IRE, Vol. 40, p. 1401, 1952.
S.K. Ghandhi, “Semiconductor Power Devices”, pp. 146–150, Wiley, New York, 1977.
W.J. Chudobiak, “The Saturation Characteristics of npvn Power Transistors”, IEEE Transactions on Electron Devices, Vol. ED-17, pp. 843–852, 1970.
F.F. Oettinger, D.L. Blackburn, and S. Rubin, “Thermal Characteristics of Power Transistors”, IEEE Transactions on Electron Devices, Vol. ED-23, pp. 831–838, 1976.
S. Darlington, “Semiconductor Signal Translating Device”, U.S. Patent 2,663,806, December 22, 1953.
C.F. Wheatley and W.G. Einthoven, “On the Proportioning of Chip Area for Multi-Stage Darlington Power Transistors”, IEEE Transactions on Electron Devices, Vol. ED-23, pp. 870–878, 1976.
B.J. Baliga et al., “The Insulated Gate Transistor”, IEEE Transactions on Electron Devices, Vol. ED-31, pp. 821–828, 1984.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2008 Springer Science+Business Media, LLC
About this chapter
Cite this chapter
Baliga, B. (2008). Bipolar Junction Transistors. In: Fundamentals of Power Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-47314-7_7
Download citation
DOI: https://doi.org/10.1007/978-0-387-47314-7_7
Published:
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-387-47313-0
Online ISBN: 978-0-387-47314-7
eBook Packages: EngineeringEngineering (R0)