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Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors

Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors

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© The Institution of Electrical Engineers
Published

A new gate structure is described for power thyristors which uses the m.o.s. field effect to control the anode breakover voltage. Experimental devices have been fabricated using a V-groove etched in (100) oriented wafers and forming the gate in these grooves. Both enhancement- and depletion-mode devices have been demonstrated.

Inspec keywords: thyristors; metal-insulator-semiconductor devices

Other keywords: MOS enhancement mode thyristor; gate structure; anode breakover voltage; V groove; power thyristors; MOS depletion mode thyristor

Subjects: Thyristors and silicon controlled rectifiers

References

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      • P.S. Raderecht . A review of the shorted emitter principle as applied to pnpn silicon controlled rectifiers. Int. J. Electron. , 541 - 564
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      • S.K. Ghandhi . (1977) , Semiconductor power devices.
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      • F.E. Holmes , C.A.T. Salama . VMOS—a new MOS technology. Solid-State Electron. , 1147 - 1154
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