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Effect of sulfur incorporation on solution-processed ZTO thin-film transistors

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Abstract

In this research, we investigated the electrical properties of solution-processed sulfur (S)-incorporated zinc-tin-oxide (S-ZTO) thin-film transistors (TFTs). The best device characteristics, which include a threshold voltage of −0.74 V, a sub-threshold swing of 0.67 V/dec, an on/off current ratio of 8.31 × 105, and a mobility of 0.70 cm2/Vs, were observed for 0.06-M S-ZTO TFTs. The device properties of the 0.06-M S-ZTO TFTs were similar to those of ZTO TFTs whereas the illumination stress stabilities and the hysteresis characteristics of the transfer curve for 0.06-M S-ZTO TFTs were better than those for ZTO TFTs. The X-ray diffraction analysis for the S-ZTO thin films also showed that tin (Sn) atoms bonded chemically with S atoms, suggesting that S atoms occupied oxygen sites, which, in turn, the reduced the number of oxygen vacancies. Therefore, the improved stabilities observed in S-ZTO TFTs are attributed to the reduction in the number of oxygen vacancies due to replacement of O by S.

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Authors and Affiliations

  1. Department of Display Engineering, Hoseo University, Asan, 336-795, Korea

    Sang-A Oh, Kyeong Min Yu, So-Hyun Jeong & Byung Seong Bae

  2. College of Green Energy Semiconductor Engineering and Department of System Control Engineering, Hoseo University, Asan, 336-795, Korea

    Eui-Jung Yun

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  1. Sang-A Oh
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  2. Kyeong Min Yu
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  3. So-Hyun Jeong
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  4. Byung Seong Bae
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Correspondence to Byung Seong Bae.

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Oh, SA., Yu, K.M., Jeong, SH. et al. Effect of sulfur incorporation on solution-processed ZTO thin-film transistors. Journal of the Korean Physical Society 66, 1144–1148 (2015). https://doi.org/10.3938/jkps.66.1144

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  • DOI: https://doi.org/10.3938/jkps.66.1144

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