Abstract
We investigated the temperature dependent recovery of the threshold voltage shift observed in both ZnO and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) after application of gate bias and light illumination. Two types of recovery were observed for both the ZnO and IGZO TFTs; low temperature recovery (below 110 °C) which is attributed to the trapped charge and high temperature recovery (over 110 °C) which is related to the annihilation of trap states generated during stresses. From a comparison study of the recovery rate with the analysis of hydrogen diffusion isochronal annealing, a similar behavior was observed for both TFT recovery and hydrogen diffusion. This result suggests that hydrogen plays an important role in the generation and annihilation of trap states in oxide TFTs under gate bias or light illumination stresses.