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Thermodynamic Stability of PtAl Thin Films on GaAs

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Abstract

The thermal stability of PtAl thin films on GaAs substrates has been studied using transmission electron microscopy and Auger electron spectroscopy. The PtAl thin films were formed by sequential deposition of discrete Pt and Al layers on GaAs by e-beam evaporation followed by subsequent annealing processes. Interfacial reactions in the Al/Pt/GaAs system proceed in two stages. Upon low temperature annealing Pt and GaAs react to form PtGa and PtAs2. Further high temperature annealing causes PtGa, PtAs2 and Al to react together producing the desired PtAl on GaAs. We observed solid-phase epitaxial regrowth of GaAs during the second stage of reaction. The PtAl/GaAs interface is determined to be thermally stable during an 800°C/30 min. anneal, while remaining morphologically uniform on GaAs.

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Acknowledgements

We would like to thank M. Kniffin and H.S. Park for their assistance on AES analysis and W.S.Lee and B.G.Park for. providing samples. This work was sponsored by the Center for Integrated Systems, Stanford University, CA.

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  1. Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305

    Dae-Hong Ko & Robert Sinclair

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  1. Dae-Hong Ko
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  2. Robert Sinclair
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Ko, DH., Sinclair, R. Thermodynamic Stability of PtAl Thin Films on GaAs. MRS Online Proceedings Library 181, 333–338 (1990). https://doi.org/10.1557/PROC-181-333

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