Abstract
Epitaxial thin films of three different Pt-Ga intermetallic compounds have been grown on GaAs by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using X-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450°C and 600°C, respectively. Thin films of Pt2Ga react with GaAs at temperatures as low as 200°C to form phases with higher Ga concentration.
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Kim, Y.K., Shuh, D.K., Williams, R.S. et al. Study of Thermodynamic Phase Stability of Intermetallic Thin Films of Pt2Ga, Ptga and PtGa2 on Gallium Arsenide. MRS Online Proceedings Library 148, 15–20 (1989). https://doi.org/10.1557/PROC-148-15
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DOI: https://doi.org/10.1557/PROC-148-15