Skip to main content
SpringerLink
Log in

Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves

  • FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstracts

The formation conditions of a smooth and oxide-free surface of InSb semiconductor with the purpose of fabricating lateral spin devices based on it are investigated. The dry etching rate by Ar ions of the surface of the crystalline faces (100) of InSb plates as well as a variation in their roughness depending on the power supplied to ion etching devices are investigated. The degree of oxidation of the semiconductor surface exposed to air after ion cleaning and annealing in molecular hydrogen are evaluated. Based on comparison of the efficiency of spin injection in devices formed with semiconductors subjected to various types of treatment, a conclusion is made about the parameters of optimal preparation of the surface of the InSb wafers for the fabrication of lateral spin devices.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.

Similar content being viewed by others

REFERENCES

  1. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).

    Article  ADS  Google Scholar 

  2. O. M. J. van’t Erve, A. L. Friedman, E. Cobas, C. H. Li, J. T. Robinson, and B. T. Jonker, Nat. Nanotechnol. 7, 737 (2012).

    Article  ADS  Google Scholar 

  3. X. Lou, C. Adelmann, S. A. Crooker, E. S. Garlid, J. Zhang, S. M. Reddy, S. D. Flexner, C. J. Palmstrom, and P. A. Crowell, Nat. Phys. 3, 197 (2007).

    Article  Google Scholar 

  4. N. A. Viglin, V. V. Ustinov, S. O. Demokritov, A. O. Shorikov, N. G. Bebenin, V. M. Tsvelikhovskaya, T. N. Pavlov, and E. I. Patrakov, Phys. Rev. B 96, 235303 (2017).

    Article  ADS  Google Scholar 

  5. G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. J. van Wees, Phys. Rev. B 62, R4790 (2000).

    Article  ADS  Google Scholar 

  6. A. E. Mirofyanchenko, E. D. Korotaev, and N. I. Yakovleva, Prikl. Fiz., No. 3, 55 (2014).

  7. R. Tessler, C. Saguy, O. Klin, S. Greenberg, E. Weiss, R. Akhvlediani, R. Edrei, and A. Hoffman, Appl. Phys. Lett. 88, 031918 (2006).

    Article  ADS  Google Scholar 

  8. A. Ya. Nashel’skii, Technology of Special Materials of Electronic Equipment (Metallurgiya, Moscow, 1993) [in Russian].

    Google Scholar 

  9. N. A. Viglin, V. V. Ustinov, V. M. Tsvelikhovskaya, and T. N. Pavlov, JETP Lett. 101, 113 (2015).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

This study was supported by the Federal Agency for Science and Education, theme “Spin”, no. AAAA-A18-118020290104-2; by the Ministry of Education and Science of the Russian Federation, project no. 14.Z50.31.0025, and by the Russian Foundation for Basic Research, project no. 16-02-00044.

Author information

Authors and Affiliations

  1. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 620990, Yekaterinburg, Russia

    N. A. Viglin, I. V. Gribov, V. M. Tsvelikhovskaya & E. I. Patrakov

Authors
  1. N. A. Viglin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. I. V. Gribov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. M. Tsvelikhovskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. E. I. Patrakov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. A. Viglin.

Additional information

Translated by N. Korovin

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Viglin, N.A., Gribov, I.V., Tsvelikhovskaya, V.M. et al. Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves. Semiconductors 53, 264–267 (2019). https://doi.org/10.1134/S1063782619020258

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782619020258

Search

Navigation