Electric injection and detection of spin-polarized electrons in InSb semiconductors have been realized in nonlocal experimental geometry using an InSb-based “lateral spin valve.” The valve of the $\mathrm{InSb}/\mathrm{MgO}/\mathrm{C}{\mathrm{o}}_{0.9}\mathrm{F}{\mathrm{e}}_{0.1}$ composition has semiconductor/insulator/ferromagnet nanoheterojunctions in which the thickness of the InSb layer considerably exceeded the spin diffusion length of conduction electrons. The spin direction in spin diffusion current has been manipulated by a magnetic field under the Hanle effect conditions. The spin polarization of the electron gas has been registered using ferromagnetic $\mathrm{C}{\mathrm{o}}_{0.9}\mathrm{F}{\mathrm{e}}_{0.1}$ probes by measuring electrical potentials arising in the probes in accordance with the Johnson-Silsbee concept of the spin-charge coupling. The developed theory is valid at any degree of degeneracy of electron gas in a semiconductor. The spin relaxation time and spin diffusion length of conduction electrons in InSb have been determined, and the electron-spin polarization in InSb has been evaluated for electrons injected from $\mathrm{C}{\mathrm{o}}_{0.9}\mathrm{F}{\mathrm{e}}_{0.1}$ through an MgO tunnel barrier.

• Received 25 October 2017

DOI:https://doi.org/10.1103/PhysRevB.96.235303