Skip to main content
SpringerLink
Log in

Effect of SiN Treatment on Optical Properties of In x Ga1−x N/GaN MQW Blue LEDs

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

In this paper, Si-doped GaN template layer and nitride-based multiple quantum well (MQW) light-emitting diodes (LEDs) with conventional GaN buffer layer and GaN buffer layer using SiN treatment were elaborated by metalorganic vapor phase epitaxy (MOVPE). On both kinds of structures, five In x Ga1−x N/GaN quantum wells were deposited simultaneously in identical growth conditions. GaN template layer defects that influence on the growth of In x Ga1−x N/GaN MQW LEDs were systematically studied by means of scanning electron microscopy, high-resolution x-ray diffraction, temperature-dependant photoluminescence measurement, and electroluminescence. It is shown that optical properties of In x Ga1−x N/GaN MQWs depend on the defect density of elaborated templates. Thereafter, we report an enhancement of the emission of blue MQW LEDs using SiN treatment, compared to the MQW LED emissions deposited on a conventional GaN buffer layer.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

We’re sorry, something doesn't seem to be working properly.

Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.

Similar content being viewed by others

References

  1. K. Zhao, X. Yang, B. Xu, D. Li, C. Wang, and L. Feng, J. Electron. Mater. (2015). doi:10.1007/s11664-015-4203-9.

    Google Scholar 

  2. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).

    Article  Google Scholar 

  3. V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, L.M.R. Scolfaro, T. Frey, D.J. As, D. Schikora, and K. Lischka, Phys. Rev. Lett. 84, 3666 (2000).

    Article  Google Scholar 

  4. T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L.T. Romano, S. Sakai, Jpn. J. Appl. Phys. 37 (part 2), L398 (1998)

  5. M.S. Jeong, J.Y. Kim, Y.-W. Kim, J.O. White, E.-K. Suh, C.-H. Hong, and H.J. Lee, Appl. Phys. Lett. 79, 976 (1997).

    Article  Google Scholar 

  6. T.S. Zheleva, O.H. Nam, M.D. Bremser, and R.F. Davis, Appl. Phys. Lett. 71, 2472 (1997).

    Article  Google Scholar 

  7. A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 71, 2259 (1997).

    Article  Google Scholar 

  8. A. Strittmatter, S. Rodt, L. Reißmann, D. Bimberg, H. Schroder, E. Obermeier, T. Riemann, J. Christen, and A. Krost, Appl. Phys. Lett. 78, 727 (2001).

    Article  Google Scholar 

  9. Z.H. Feng, Y.D. Qi, Z.D. Lu, and K.M. Lau, J. Cryst. Growth 272, 327 (2004).

    Article  Google Scholar 

  10. T. Yang, K. Uchida, T. Mishima, J. Kasai, and J. Gotoh, Phys. Stat. Sol. (a) 180, 45 (2000).

    Article  Google Scholar 

  11. S. Figge, T. Bottcher, S. Einfeldt, and D. Hommel, J. Cryst. Growth 221, 262 (2000).

    Article  Google Scholar 

  12. C.H. Kuo, S.J. Chang, Y.K. Su, C.K. Wang, L.W. Wu, J.K. Sheu, T.C. Wen, W.C. Lai, J.M. Tsai, and C.C. Lin, Solid-State Electron. 47, 2019 (2003).

    Article  Google Scholar 

  13. C.H. Liu, R.W. Chuang, S.J. Chang, Y.K. Su, C.H. Kuo, J.M. Tsai, and C.C. Lin, Mater. Sci. Eng., B 111, 214 (2004).

    Article  Google Scholar 

  14. S.C. Wei, Y.K. Su, S.J. Chang, S.-M. Chen, and W.-L. Li, IEEE Trans. Electron Devices 52, 1104 (2005).

    Article  Google Scholar 

  15. Z. Benzarti, I. Halidou, T. Boufaden, B. El Jani, S. Juillaguet, and M. Ramonda, Phys. Stat. Sol. (a) 201, 502 (2004).

    Article  Google Scholar 

  16. I. Halidou, Z. Benzarti, T. Boufaden, B. El Jani, S. Juillaguet, and M. Ramonda, Mater. Sci. Eng. B 110, 251 (2004).

    Article  Google Scholar 

  17. I. Halidou, Z. Benzarti, H. Fitouri, W. Fathallah, and B. El Jani, Phys. Stat. Sol. (c) 4, 129 (2007).

    Article  Google Scholar 

  18. M. Bouzidi, Z. Benzarti, I. Halidou, Z. Chine, A. Bchetnia, and B. El Jani, Superlattices Microstruct. 84, 13 (2015).

    Article  Google Scholar 

  19. A. Rebey, T. Boufaden, and B. El Jani, J. Cryst. Growth 203, 12 (1999).

    Article  Google Scholar 

  20. Z. Benzarti, M. Khelifi, I. Halidou, and B. El Jani, J. Electron. Mater. 44, 3243 (2015).

    Article  Google Scholar 

  21. Z. Benzarti, M. Khelifi, A. Khalfallah, and B. El Jani, J. Mater. Sci. Mater. Electron. 27, 6336 (2016).

    Article  Google Scholar 

  22. X.H. Zheng, H. Chen, Z.B. Yan, Y.J. Han, H.B. Yu, D.S. Li, Q. Huang, and J.M. Zhou, J. Cryst. Growth 255, 63 (2003).

    Article  Google Scholar 

  23. H. Wang, D.S. Jiang, U. Jahn, J.J. Zhu, D.G. Zhao, Z.S. Liu, S.M. Zhang, Y.X. Qiu, and H. Yang, Phys. B 405, 4668 (2010).

    Article  Google Scholar 

  24. D. Kapolnek, X.H. Wu, B. Heying, S. Keller, B.P. Keller, U.K. Mishra, S.P. DenBaars, and J.S. Speck, Appl. Phys. Lett. 67, 1541 (1995).

    Article  Google Scholar 

  25. S. Haffouz, H. Tang, J.A. Bardwell, P. Lefebvre, T. Bretagnon, T. Riemann, and J. Christen, J. Appl. Phys. 100, 013528 (2006).

    Article  Google Scholar 

  26. M.C. Johnson, E.D. Bourret-Courchesne, J. Wu, Z. Liliental-Weber, D.N. Zakharov, R.J. Jorgenson, T.B. Ng, D.E. McCready, and J.R. Williams, J. Appl. Phys. 96, 1381 (2004).

    Article  Google Scholar 

  27. L. Zhu and B. Liu, Solid-State Electron. 53, 336 (2009).

    Article  Google Scholar 

  28. M. Hao, J. Zhang, X.H. Zhang, and S. Chua, Appl. Phys. Lett. 81, 5129 (2002).

    Article  Google Scholar 

  29. C. Delalande, M.H. Meynadier, and M. Voos, Phys. Rev. B. 31, 2497 (1985).

    Article  Google Scholar 

  30. H.B. Yu, H. Chen, D. Li, J. Wang, Z.G. Xing, X.H. Zheng, Q. Huang, and J.M. Zhou, J. Cryst. Growth 266, 455 (2004).

    Article  Google Scholar 

  31. Y. Yang, P. Ma, X. Wei, D. Yan, Y. Wang, and Y. Zeng, J. Luminescence 155, 238 (2014).

    Article  Google Scholar 

  32. C. Li, E.B. Stokes, and E. Armour, ECS J. Solid State Sci. Technol. 4, R10 (2015).

    Article  Google Scholar 

Download references

Acknowledgements

The authors gratefully acknowledge the financial support of DGRST. They would like to thank the anonymous reviewers for their valuable efforts.

Author information

Authors and Affiliations

  1. Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019, Monastir, Tunisia

    Z. Benzarti & B. El Jani

  2. Centre de Recherche en Microélectronique et Nanotechnologie, Technopôle de Sousse, BP 334, Sahloul, Sousse, Tunisia

    T. Sekrafi

  3. Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), CNRS et Université des Sciences et Technologies de Lille 1, Avenue Poincaré, 59652, Villeneuve d’Ascq, France

    Z. Bougrioua

  4. Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse, Sousse, Tunisia

    A. Khalfallah

Authors
  1. Z. Benzarti
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. Sekrafi
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Z. Bougrioua
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. Khalfallah
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. B. El Jani
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Z. Benzarti.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Benzarti, Z., Sekrafi, T., Bougrioua, Z. et al. Effect of SiN Treatment on Optical Properties of In x Ga1−x N/GaN MQW Blue LEDs. J. Electron. Mater. 46, 4312–4320 (2017). https://doi.org/10.1007/s11664-017-5383-2

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-017-5383-2

Keywords

Search

Navigation