Spatially and spectrally resolved photoluminescence (PL) from InGaN/GaN quantum wells is obtained using near-field scanning optical microscopy (NSOM). Samples displaying high macroscopic PL intensity revealed nonuniform intensity and linewidth but nearly uniform peak position. It suggests that the contrast in the NSOM image reflects nonuniform distribution of dislocations or defects which act as nonradiative recombination centers. The formation of quantum dots with size of and their size-dependent interaction with dislocations were observed in plan-view transmission electron microscopy. It is likely that the high luminescence efficiency is due to the efficient localization of excitons in high-density quantum dots located in regions with fewer dislocations.
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13 August 2001
Research Article|
August 13 2001
Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy
M. S. Jeong;
M. S. Jeong
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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J. Y. Kim;
J. Y. Kim
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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Y.-W. Kim;
Y.-W. Kim
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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J. O. White;
J. O. White
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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E.-K. Suh;
E.-K. Suh
Semiconductor Physics Research Center and School of Science and Technology, Chonbuk National University, Chonju 561-756, Korea
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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C.-H. Hong;
C.-H. Hong
Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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H. J. Lee
H. J. Lee
Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Appl. Phys. Lett. 79, 976–978 (2001)
Article history
Received:
January 12 2001
Accepted:
June 11 2001
Citation
M. S. Jeong, J. Y. Kim, Y.-W. Kim, J. O. White, E.-K. Suh, C.-H. Hong, H. J. Lee; Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy. Appl. Phys. Lett. 13 August 2001; 79 (7): 976–978. https://doi.org/10.1063/1.1391227
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