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Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures

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Abstract

We prepared the Au/Ti/Al2O3/n-GaAs MIS (metal/insulating/semiconductor) structures with and without Al2O3 interfacial layer. The diode D1 has the interfacial layer thickness of 3 nm, and the diode D2 5 nm and diode D3 10 nm. We studied to obtain the high- or low-barrier-height devices depending on interfacial layer thickness for the availability of different opto-electronic circuit elements. We reported a zero-bias barrier height Φb0  value of 0.77 eV for the as-deposited Au/Ti/n-type GaAs diode from the 300 K I–V measurements. We obtained the Φb0 values of 0.73, 0.94, and 1.11 eV for the D1, D2, and D3 MIS diodes at 300 K, respectively. The temperature-induced current–voltage measurements for the diodes were made in the temperature range of 50–320 K. The Φb0 value for the as-deposited and D1 diodes raised very slightly from 320 K down to 120 K, but it decreased sharply from 120 to 50 K. The temperature-induced current–voltage measurements for the diodes were made in the temperature range of 50–320 K. The Φb0 value for the D2 and D3 diodes decreased slightly from 320 K down to 120 K, but it decreased sharply from 120 to 50 K. The apparent low barrier height (BH) with decreasing temperature can be attributed to the fact that the current preferentially flows through the low BH with the temperature due to the BH inhomogeneity. The Rs values for the as-deposited, D1, D2, and D3 MIS structures were determined as 130 Ω, 5.80 Ω, 101 Ω, and 216 Ω from the forward bias I–V curves at 300 K, respectively. The fact that the D1 and D2 samples have lower Rs values than that of the as-deposited sample may be attributed to the fact that the Al2O3 thin film improves the inhomogeneity of the Schottky interface.

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  1. Department of Engineering Physics, Faculty of Engineering and Natural Sciences, Istanbul Medeniyet University, Uskudar, 34700, Istanbul, Turkey

    Abdulmecit Turut

  2. Department of Basic Sciences, Faculty of Sciences, Erzurum Technical University, Erzurum, Turkey

    Abdulkerim Karabulut

  3. Department of Electrical and Electronics Engineering, Faculty of Engineering, Atatürk University, TR-25240, Erzurum, Turkey

    Hasan Efeoǧlu

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Turut, A., Karabulut, A. & Efeoǧlu, H. Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures. J Mater Sci: Mater Electron 32, 22680–22688 (2021). https://doi.org/10.1007/s10854-021-06753-1

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