Abstract
We present high-resolution diffraction measurements of the lattice parameters of HgCdTe and CdZnTe. These measurements were performed at various temperatures ranging from room temperature up to 300°C, enabling the determination of the coefficients of thermal expansion (CTE) and the evolution of the HgCdTe film stress during the thermal cycling. It is found that the CTE is linear with the zinc fraction for CdZnTe, while it can be described by a parabolic variation as a function of the cadmium fraction for HgCdTe. The temperature evolution of the stress is found to be dictated by the CTE difference between the substrate and epilayer up to a temperature of 150°C, for which the stress is partially relaxed. For the sample grown on CdTe/Ge, the HgCdTe lattice is found to be fully relaxed at room temperature and the thermoelastic evolution of the stress of HgCdTe is imposed by the coefficient of thermal expansion of the germanium substrate.
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Gergaud, P., Jonchère, A., Amstatt, B. et al. X-ray Diffraction Investigation of Thermoelastic Properties of HgCdTe/CdZnTe Structures. J. Electron. Mater. 41, 2694–2699 (2012). https://doi.org/10.1007/s11664-012-2240-1
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DOI: https://doi.org/10.1007/s11664-012-2240-1