Abstract
This article attempts to assess the radiation resistance of heterostructure silicon solar cells to the effects of 1 MeV electrons and discusses their prospects for power supply of the global low-orbit satellite communication system. The data obtained from this study allow us to identify the most promising types of heterostructure silicon solar cells for use in low-orbit spacecraft. These are n-α-Si:H-(p)c-Si:Ga-p-α-Si:H and n-µc-Si:H-(p)c-Si:Ga-p-α-Si:H solar cells. The degradation in efficiency of these structures was less than 30% by 1 × 1015 cm–2 fluence of 1 MeV electrons.
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The authors are grateful to the employees of the Ioffe Institute, Russian Academy of Sciences and the Saint Petersburg Electrotechnical University ETU-LETI for valuable advice when discussing the results of scientific research.
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Kalinovskii, V.S., Terukov, E.I., Abolmasov, S.N. et al. Studies of Degradation Silicon Heterojunction Solar Cells by 1 MeV Electrons Irradiation. Appl. Sol. Energy 59, 604–611 (2023). https://doi.org/10.3103/S0003701X23600984
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DOI: https://doi.org/10.3103/S0003701X23600984