Skip to main content
SpringerLink
Log in

Degradation of CVD-grown MoS2 subjected to DC electrical stress

  • Research Letter
  • Published:
MRS Communications Aims and scope Submit manuscript

Abstract

Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for the longevity and effectiveness of these devices. In this study, CVD-grown MoS2 crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicated regions of increased defect concentration post-electrical stress.

Graphical abstract

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Figure 1
Figure 2
Figure 3
Figure 4

References

  1. J.L. Doherty et al., Capping layers to improve the electrical stress stability of MoS2 transistors. ACS Appl. Mater. Interfaces 12(31), 35698–35706 (2020)

    Article  CAS  Google Scholar 

  2. Y. Zhang et al., Photothermoelectric and photovoltaic effects both present in MoS2. Sci. Rep. 5(1), 7938 (2015)

    Article  CAS  Google Scholar 

  3. D. Dumcenco et al., Large-area epitaxial monolayer MoS2. ACS Nano 9(4), 4611–4620 (2015)

    Article  CAS  Google Scholar 

  4. H. Zhang et al., Stabilizing the heavily-doped and metallic phase of MoS2 monolayers with surface functionalization. 2D Mater. 9(1), 015033 (2021)

    Article  Google Scholar 

  5. S. Hao, B. Yang, Y. Gao, Quenching induced fracture behaviors of CVD-grown polycrystalline molybdenum disulfide films. RSC Adv. 6(64), 59816–59822 (2016)

    Article  CAS  Google Scholar 

  6. S. Hao, B. Yang, Y. Gao, Orientation-specific transgranular fracture behavior of CVD-grown monolayer MoS2 single crystal. Appl. Phys. Lett. 110(15), 153105 (2017)

    Article  Google Scholar 

  7. A.J. Watson et al., Transfer of large-scale two-dimensional semiconductors: challenges and developments. 2D Mater. 8(3), 032001 (2021)

    Article  CAS  Google Scholar 

  8. R. Mupparapu, T. Bucher, I. Staude, Integration of two-dimensional transition metal dichalcogenides with Mie-resonant dielectric nanostructures. Adv. Phys.: X 5(1), 1734083 (2020)

    CAS  Google Scholar 

  9. M. Sharma, A. Singh, R. Singh, Monolayer MoS2 transferred on arbitrary substrates for potential use in flexible electronics. ACS Appl. Nano Mater. 3(5), 4445–4453 (2020)

    Article  CAS  Google Scholar 

  10. R. Garcia, R. Proksch, Nanomechanical mapping of soft matter by bimodal force microscopy. Eur. Polym. J. 49(8), 1897–1906 (2013)

    Article  CAS  Google Scholar 

  11. W. Melitz et al., Kelvin probe force microscopy and its application. Surf. Sci. Rep. 66(1), 1–27 (2011)

    Article  CAS  Google Scholar 

  12. M.C. Strus et al., Accelerated reliability testing of highly aligned single-walled carbon nanotube networks subjected to DC electrical stressing. Nanotechnology 22(26), 265713 (2011)

    Article  Google Scholar 

  13. D. Lembke, S. Bertolazzi, A. Kis, Single-layer MoS2 electronics. Acc. Chem. Res. 48(1), 100–110 (2015)

    Article  CAS  Google Scholar 

  14. X. Bian, C. Kim, G.E. Karniadakis, 111 years of Brownian motion. Soft Matter 12(30), 6331–6346 (2016)

    Article  CAS  Google Scholar 

  15. G. Hao et al., Electrostatic properties of few-layer MoS2 films. AIP Adv. 3(4), 042125 (2013)

    Article  Google Scholar 

  16. K.M. McCreary et al., A- and B-exciton photoluminescence intensity ratio as a measure of sample quality for transition metal dichalcogenide monolayers. APL Mater. 6(11), 111106 (2018)

    Article  Google Scholar 

  17. S. Tongay et al., Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons. Sci. Rep. 3(1), 2657 (2013)

    Article  Google Scholar 

  18. Y. Liu et al., Enhanced photoluminescence of monolayer MoS2 on a stepped gold structure. Chin. Phys. B 31, 087803 (2022)

    Article  Google Scholar 

Download references

Acknowledgments

We gratefully acknowledge Nuwan H. Attanayake at NREL for the MoS2 material and Jason Holm at NIST for SEM assistance. D. Goggin performed this work as part of a National Research Council postdoctoral fellowship at NIST.

Author information

Author notes

  1. Elisabeth Mansfield and David Goggin contributed equally to the work.

Authors and Affiliations

  1. Applied Chemicals and Materials Division, Materials Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO, USA

    Elisabeth Mansfield, David Goggin & Jason Killgore

  2. Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, USA

    Taylor Aubry

Authors
  1. Elisabeth Mansfield
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. David Goggin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jason Killgore
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Taylor Aubry
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Elisabeth Mansfield.

Ethics declarations

Competing interest

Certain commercial equipment, instruments, or materials are identified in this paper to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by NIST, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. The authors declare no competing financial interests.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Contribution of the US Government. Not subject to copyright in the United States.

Supplementary Information

Below is the link to the electronic supplementary material.

Supplementary file1 (DOCX 14682 kb)

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Mansfield, E., Goggin, D., Killgore, J. et al. Degradation of CVD-grown MoS2 subjected to DC electrical stress. MRS Communications 12, 878–885 (2022). https://doi.org/10.1557/s43579-022-00261-x

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/s43579-022-00261-x

Keywords

Search

Navigation