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High Quality Deposition of Strontium Titanate (STO) Thin Films using Sol-Gel Method

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Abstract

Highly oriented strontium titanate (STO) thin films were successfully deposited on sapphire substrates using a sol-gel method. Sintering temperature of 1400°C and the use of c-cut sapphire for the substrates are the keys to obtain highly oriented thin films. The sample obtained on c-cut sapphire with a sintering temperature of 1400°C showed quite high (111)-orientation and a narrow full width half maximum (FWHM) value of 0.265°, which indicates a high quality deposition of the STO thin films.

We believe this high quality STO deposition technique will bring a new scope of oxide material applications for future electronic devices.

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Acknowledgments

This work was supported by Grant-in-Aid for Young Scientists (Start-up) from Japan Society for the Promotion of Science (No. 18860054).

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Authors and Affiliations

  1. Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama-cho 8916-5, Ikoma, Nara, 630-0192, Japan

    Kiyoshi Uchiyama, Daiki Fukunaga & Tadashi Shiosaki

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  1. Kiyoshi Uchiyama
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  2. Daiki Fukunaga
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  3. Tadashi Shiosaki
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Uchiyama, K., Fukunaga, D. & Shiosaki, T. High Quality Deposition of Strontium Titanate (STO) Thin Films using Sol-Gel Method. MRS Online Proceedings Library 1034, 130–133 (2007). https://doi.org/10.1557/PROC-1034-K10-23

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  • DOI: https://doi.org/10.1557/PROC-1034-K10-23

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