Abstract
The constant photocurrent method has been used to obtain the density of occupied electronic states of tritiated amorphous silicon thin films. The analyses showed a peak of defects located 1.24 eV below the conduction band edge, suggesting that the main type of defect present in the films was a doubly occupied dangling bond. The concentration of defect states increases as a result of tritium decay by about two orders of magnitude over a period of 500 hours. The defect density in the tritiated amorphous silicon samples could be reduced by thermal annealing, after which it increased once more.
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Pisana, S., Costea, S., Kosteski, T. et al. Density of States in Tritiated Amorphous Silicon Measured Using CPM. MRS Online Proceedings Library 836, L8.9 (2004). https://doi.org/10.1557/PROC-836-L8.9
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DOI: https://doi.org/10.1557/PROC-836-L8.9