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Laser (λ = 809 nm) power converter based on GaAs

  • Physics of Semiconductor Devices
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Abstract

Laser-power converters with a wavelength of λ = 809 nm are fabricated on the basis of single-junction AlGaAs/GaAs heterostructures grown by the method of liquid-phase epitaxy (LPE). Photovoltaic modules with an operating voltage of 4 V for converting radiation of various densities are developed and tested. Two approaches—without the use of optical concentrating systems and with the use of Fresnel lenses are investigated. A monochromatic conversion efficiency exceeding 44% is attained with a photovoltaic module based on 64 laser-radiation converters 0.04 cm2 in area and a concentrating system made of a quartz-lens matrix.

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Authors and Affiliations

  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova & N. Kh. Timoshina

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  1. V. P. Khvostikov
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  2. S. V. Sorokina
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  3. N. S. Potapovich
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  4. O. A. Khvostikova
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  5. N. Kh. Timoshina
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Correspondence to V. P. Khvostikov.

Additional information

Original Russian Text © V.P. Khvostikov, S.V. Sorokina, N.S. Potapovich, O.A. Khvostikova, N.Kh. Timoshina, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 5, pp. 676–679.

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Khvostikov, V.P., Sorokina, S.V., Potapovich, N.S. et al. Laser (λ = 809 nm) power converter based on GaAs. Semiconductors 51, 645–648 (2017). https://doi.org/10.1134/S1063782617050128

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  • DOI: https://doi.org/10.1134/S1063782617050128

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