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Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The effect of the postgrowth annealing of InP/InAsP/InP heterostructural nanowires produced by molecular-beam epitaxy on their structural and optical properties is studied. It is shown that the procedure of short-term (1 min) annealing in an argon atmosphere provides a means for increasing the emission intensity of InAsP quantum dots, suppressing the emission from InAsP quantum wells formed as a result of lateral growth, and substantially reducing the density of structural defects in the nanowires.

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Authors and Affiliations

  1. Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 190083, Russia

    G. E. Cirlin

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    G. E. Cirlin

  3. St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    G. E. Cirlin

  4. Institut d’Electronique Fondamentale UMR 8622 CNRS, Université Paris-Sud 15, Orsay Cedex, 91405, France

    M. Tchernycheva

  5. LPN CNRS, Marcoussis, 91460, France

    G. Patriarche & J. -C. Harmand

Authors
  1. G. E. Cirlin
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  2. M. Tchernycheva
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  3. G. Patriarche
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  4. J. -C. Harmand
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Correspondence to G. E. Cirlin.

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Original Russian Text © G.E. Cirlin, M. Tchernycheva, G. Patriarche, J.-C. Harmand, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 2, pp. 184–187.

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Cirlin, G.E., Tchernycheva, M., Patriarche, G. et al. Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires. Semiconductors 46, 175–178 (2012). https://doi.org/10.1134/S1063782612020224

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  • DOI: https://doi.org/10.1134/S1063782612020224

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