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Wide-Range Current-Controlled Floating Resistor for CMOS Technology

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Abstract

This paper presents a current-controllable CMOS floating resistor (CCFR) possessing a number of interesting features. Its functioning has been verified by performing simulations on Cadence VIRTUOSO software at 0.18 µm CMOS technology. The proposed circuit operates with a supply voltage of ± 0.6 V and the value of the realised resistance can be varied from 13kΩ to 1.3GΩ (five decades), when the bias current (Io) is varied from 10pA to 1µA, with a maximum linearity error of less than 4%. The circuit operates well up to a frequency of 50 MHz and consumes a power of only 26 µW at the maximum bias current of 1µA. Furthermore, post-layout simulations and corner analysis are carried out to evaluate its resilience in the presence of manufacturing non-idealities. A Sallen-Key high-pass filter with electronically-controllable cut-off frequency has been implemented by replacing the two resistors of the filter circuit by the proposed CCFRs and the workability of this arrangement has also been confirmed by simulations.

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Notes

  1. For some other interesting MOS-based electronically-controllable grounded resistor circuits, see (Senani et al. 2020), (Yuce et al. 2011), (Yüce et al. 2014), (Yuce et al. 2014), (Yuce et al. 2016) and the references cited therein.

  2. A wide-range of bias currents have already been generated in the previously reported studies, such as (Delbrück and Schaik 2005; Delbrück and Schaik 2004). With the help of these biasing circuits, the specified range of bias currents varying from 10pA to 10µA can be generated in the proposed circuit.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Netaji Subhas University of Technology, Sector 3, Dwarka, New Delhi, 110078, India

    Aakriti Chhabra, Raj Senani & Bhawna Aggarwal

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  1. Aakriti Chhabra
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  2. Raj Senani
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  3. Bhawna Aggarwal
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Correspondence to Raj Senani.

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Chhabra, A., Senani, R. & Aggarwal, B. Wide-Range Current-Controlled Floating Resistor for CMOS Technology. Iran J Sci Technol Trans Electr Eng 47, 1743–1757 (2023). https://doi.org/10.1007/s40998-023-00646-1

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