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Ag/BST/p-Si MFS Device Production and Characterization

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Abstract

The Ag/BST/p-Si/Al device in the complementary-metal–oxide–semiconductor (CMOS) structure has been produced and characterized. The influence of the BST deposition parameters as well as the crystallinity and the surface morphology effect on the electrical properties of the device has been investigated. The effect of Ag metal contact as an electrode on the electrical properties of the device was also discussed. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the MIS device have been studied. Frequency (f) and DC bias voltage (V) dependence of the dielectric material and electrical properties of Ag/BST/p-Si/Al have been investigated in the kilohertz frequency range (75–900 kHz) and bias range from − 6 V to + 6 V. Dielectric constant (εʹ), dielectric loss (εʺ), loss tangent (tanδ) and conductance (G) behavior of the MIS device have been discussed in detail. The device showed attracted rectification behavior with high capacitance achievement. Also, the device was frequency independent in kilohertz frequency level without dispersion at room temperature. This device structure which has superior electrical properties can be an attractive candidate for the ferroelectric dynamic random access memories (FDRAM) and radio frequency (RF) applications.

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Authors and Affiliations

  1. Graduate School of Natural and Applied Sciences, Süleyman Demirel University, 32260, Isparta, Turkey

    Bassam Mohammed Jasim

  2. Department of Physics, Faculty of Arts and Sciences, Süleyman Demirel University, 32260, Isparta, Turkey

    Murat Kaleli

  3. Innovative Technologies Application and Research Center (YETEM), Süleyman Demirel University, 32260, Isparta, Turkey

    Murat Kaleli

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  1. Bassam Mohammed Jasim
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Jasim, B.M., Kaleli, M. Ag/BST/p-Si MFS Device Production and Characterization. Arab J Sci Eng 47, 7797–7806 (2022). https://doi.org/10.1007/s13369-022-06676-x

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