Abstract
There exists an extensive research interest in the performance improvement of AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs). Herein, to reduce the carrier leakage problem of LDs, we propose a convex waveguide (WG) layer for improving the optoelectronic properties. Numerical analyses are carried out to compare the proposed convex WG layer with traditional and stepped WG layers. For LDs with seven different WG layers, parameters used for comparison are P – I and V – I characteristic curves, carrier concentrations, stimulated recombination rates, slope efficiencies, and electro-optical conversion efficiencies. We show that the application of the convex WG layer considerably enhances the carrier confinement ability of LDs and reduces carrier leakage, improving the performance of the LDs. The overall performance of LDs with only a convex lower WG (LWG) layer or a stepped LWG layer is stronger than that of LDs with only a convex upper WG (UWG) layer or a stepped UWG layer.
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Zhang, P., Zhang, A., Jia, L. et al. Improving the Performance of AlGaN-Based Deep Ultraviolet Laser Diodes Using a Convex Waveguide Layer. J Russ Laser Res 43, 612–618 (2022). https://doi.org/10.1007/s10946-022-10087-6
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DOI: https://doi.org/10.1007/s10946-022-10087-6