Abstract
The increasing sensitivity of high impedance cryogenic detectors demands amplification stages closer to detectors to guarantee high performance. We have developed a cryogenic installation to measure the intrinsic noise, the gain, and the DC characteristics of HEMTs or MOSFETs at low temperature. Components under test are mounted in a helium cryostat containing a double stage \(^{3}\)He/\(^{4}\)He sorption cooler to perform sub-kelvin measurements. In this work, we describe this installation and present the encouraging first results that have revealed a level of intrinsic input voltage noise of a HEMT, developed by CNRS/LPN, of 0.44 nV/sqrt(Hz) at 1 kHz at 480 mK (Cin \(=\) 100 pF).
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Acknowledgments
This work has been supported by the CESAR project (Cryogenic Electronics for Space Applications and Research) funded by the European Union under the Seventh Framework Program (FP7, Grant Agreement number 263455).
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Torres, L., Arcambal, C., Delisle, C. et al. First Measurement of the Intrinsic Noise of a HEMT at Sub-Kelvin Temperatures. J Low Temp Phys 184, 466–472 (2016). https://doi.org/10.1007/s10909-016-1565-1
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DOI: https://doi.org/10.1007/s10909-016-1565-1