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Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis

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Abstract

Cu(In1 − xGax)Se2 (CIGS) thin films with x = 0 (CIS) and x = 0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 °C, followed by selenization treatment at 550 °C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x = 0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.

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Acknowledgements

Authors wish to thank Adolfo Tavira Fuentes (XRD measurements), Norma Iris (thermal evaporation of Ag), Miguel Galván A (Electrical measurements) from Department of solid state electronics of Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN) for their technical assistance. Our special thanks to Dr. Orlando Zelaya from Department of Physics of CINVESTAV-IPN for providing tubular furnace facilities. B. J. Babu is thankful to Consejo Nacional de Ciencia y Tecnologia (CONACyT) for their continuous financial support to pursue Ph. D in Mexico and for providing Beca-Mixta scholarship to do 3 months project work at Colorado School of Mines.

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Authors and Affiliations

  1. Department of Physics, Madanapalle Institute of Technology and Science, Angallu, Chittoor, A.P., 517325, India

    B. J. Babu

  2. Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, C.P. 07360, Mexico D.F., Mexico

    B. J. Babu & S. Velumani

  3. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO, 80401, USA

    B. Egaas

Authors
  1. B. J. Babu
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  2. B. Egaas
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  3. S. Velumani
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Correspondence to B. J. Babu or S. Velumani.

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Babu, B.J., Egaas, B. & Velumani, S. Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis. J Mater Sci: Mater Electron 29, 15369–15375 (2018). https://doi.org/10.1007/s10854-018-8916-4

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  • DOI: https://doi.org/10.1007/s10854-018-8916-4

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