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A fast transient response low-dropout regulator with all-NPN push–pull buffer in 0.6-μm bipolar process

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Abstract

This paper presents a fast transient response low-dropout (LDO) regulator with all-NPN push–pull buffer in 0.6-μm bipolar process. In order to improve the transient response, an all-NPN push–pull buffer is proposed. Based on single Miller capacitance (SMC), the use of the all-NPN push–pull buffer overcomes the shortcomings of the equivalent series resistance (ESR) that requires strict output capacitor types. Besides, the proposed merging structure of bandgap reference and error amplifier not only improves the transient response, but also simplifies the circuit and reduces the output noise. Implemented and fabricated in a 0.6-μm bipolar process, the proposed LDO regulator occupies an active area of 1.6 mm2. The measured maximum load current is 200 mA, and the circuit can work at the load current of 300 mA. Moreover, the measured line regulation and load regulation are 0.8 mV/V and 0.09 mV/mA, respectively.

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Acknowledgements

This work is supported by National Natural Science Foundation of China (U19A2053).

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Authors and Affiliations

  1. School of Microelectronics, Hefei University of Technology, Hefei, 230601, China

    Zhang Zhang, Hongtao Ren, Annan Wang, Hongyuan Wu, Wei Cheng, Guangjun Xie & Xin Cheng

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  1. Zhang Zhang
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  2. Hongtao Ren
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  3. Annan Wang
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  4. Hongyuan Wu
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  5. Wei Cheng
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  6. Guangjun Xie
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  7. Xin Cheng
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Correspondence to Xin Cheng.

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Zhang, Z., Ren, H., Wang, A. et al. A fast transient response low-dropout regulator with all-NPN push–pull buffer in 0.6-μm bipolar process. Analog Integr Circ Sig Process 114, 359–369 (2023). https://doi.org/10.1007/s10470-022-02110-2

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