Abstract
An efficient method for CMOS current-source modes (A, B, AB, C classes) Power Amplifier (PA) design for low-power applications is presented. This method allows to set the conduction angle α and the transistor size W/L in order to maximize the PAE. In a first step, an analytical approach, built from a simple transistor model, gives a first approximation of the optimum α and W/L. In a second step and from the analytical results, a simulation approach, illustrated with a 0.28μm CMOS foundry design-kit, allows to precisely determine the optimum conduction angle and the transistor size. A PA designed with this method at 2.45 GHz for a class 2 Bluetooth application shows a 41% PAE and a surface consumption of 0.28 mm2 for an output power of 4 dBm.
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References
S.C. Cripps, RF Power Amplifiers for Wireless Communications. Artech House Publishers, 1999.
D. Johns and K. Martin, Analog Integrated Circuit Design. John Wiley & Sons, 1997.
T. Manku, “Microwave CMOS-device physics and design.” IEEE Journal of Solid-State Circuits, vol. 34, no. 3, pp. 277–285, March 1999.
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Dehaese, N., Bourdel, S., Gaubert, J. et al. Design method for CMOS current-source modes power amplifiers based on PAE optimization. Analog Integr Circ Sig Process 49, 167–170 (2006). https://doi.org/10.1007/s10470-006-9495-5
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DOI: https://doi.org/10.1007/s10470-006-9495-5