Abstract
A plasma-enhanced reactive magnetron sputtering system with inner-type low-inductance modules has been developed. The properties of plasma sustained with inner-type low-inductance antenna (LIA) modules and the characteristics of silicon films deposited with a plasma-enhanced reactive sputter deposition system have been investigated. The results of plasma properties show that it is possible to control sputtering flux and reactivity independently via control target voltage and plasma density. Silicon films deposited by Ar + H2 mixture plasma-enhanced reactive magnetron sputtering confirmed crystallization for a H2 partial pressure (Rp) higher than 8% via XRD patterns and Raman spectra.