Abstract
We performed first-principles calculations of the spontaneous polarization and electronic band structures in ScxAlyGa1-x-yN alloys assuming their growth on freestanding GaN. We found an apparent deviation from the Vegard's law of the lattice constants of the ScxAlyGa1-x-yN alloys lattice-matched to GaN. It was supposed that this deviation comes from the different bonding properties of IIIB and IIIA nitrides, resulting in different crystal structures, such as hexagonal and wurtzite structures. As was reported in our previous report on YxAlyGa1-x-yN [K. Shimada et al.: J. Appl. Phys. 110 (2011) 074114], we also found that in ScxAlyGa1-x-yN alloys, the superlattice-like structure of Sc atoms reduced the magnitude of spontaneous polarization [K. Shimada et al.: Semicond. Sci. Technol. 27 (2012) 105014]. The magnitude of the spontaneous polarization of ScxAlyGa1-x-yN is larger than that of YxAlyGa1-x-yN in a wide mole fraction range of Ga. We found the nonlinearity and dependence of the atomic arrangement of Sc in the alloys. The band-gap energies at Γ have the same characteristics as the spontaneous polarization. The band-gap energies of ScxAlyGa1-x-yN are also larger than those of YxAlyGa1-x-yN in the wide mole fraction range of Ga. The band structures of ScxAlyGa1-x-yN have a direct gap at Γ and form a flat band around the valence band top originating from the hybridization of the Sc 3d and N 2p electrons.