Abstract
We report the hybrid p–n junction based on GaN quantum dots (QDs) as an electron transport layer and poly(3-hexylthiophene-2,5-diyl) (P3HT) as a hole transport layer, which has not been tried for the solar cell until now. The growth of GaN QDs was achieved by the hydride vapor phase epitaxy (HVPE) technique and P3HT film sequentially was coated on the top of QDs. The overall performance of P3HT/GaN QDs hybrid heterojunction was analyzed by current density–voltage (J–V) characteristics and finally exhibited an open-circuit voltage, short-circuit current density, and fill factor of 160 mV, 3.6 mA/cm2, and 0.25, respectively. Also, its efficiency was shown up to 0.14% in an active area of 0.04 cm2 under AM1.5G illumination with an intensity of 100 mW cm-2. In this paper, we discuss the factors which affect the power conversion efficiency for future works.