Photoinduced Paramagnetic Defects on Silicon Surface

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Copyright (c) 1974 The Japan Society of Applied Physics
, , Citation Ikuo Shiota et al 1974 Jpn. J. Appl. Phys. 13 417 DOI 10.7567/JJAPS.2S2.417

1347-4065/13/S2/417

Abstract

Two photoinduced ESR absorption lines are observed at high resistivity silicon surfaces which are chemically etched and followed to rinse with water. It is found that these centers are associated with dissociative water adsorption on surface structural hydroxyl groups and become parama-gnetic by trapping photoexcited excess free carriers.

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10.7567/JJAPS.2S2.417