Formation and properties of p–i–n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications

Nikolay G. Galkin; Konstantin N. Galkin; Igor M. Chernev; Radek Fajgar; The Ha Stuchlikova; Jiri Stuchlik; Zdenek Remes

doi:10.56646/jjapcp.3.0_011104

International Conference and Summer School on Advanced Silicide Technology 2014

Session ID : 011104

DOI https://doi.org/10.56646/jjapcp.3.0_011104

Conference information

Host: The Japan Society of Applied Physics

Name : International Conference and Summer School on Advanced Silicide Technology 2014

Location : Tokyo, Japan

Date : July 19, 2014 - July 21, 2014

Light emission and detection materials

Formation and properties of p–i–n diodes based on hydrogenated amorphous silicon with embedded CrSi₂, Mg₂Si and Ca₂Si nanocrystallites for energy conversion applications

Nikolay G. Galkin, Konstantin N. Galkin, Igor M. Chernev, Radek Fajgar, The Ha Stuchlikova, Jiri Stuchlik, Zdenek Remes

Author information

Nikolay G. Galkin
Institute of Automation and Control Processes of Far Eastern Branch of RAS, Vladivostok, 690041, Radio, 5, Russia
Konstantin N. Galkin
Institute of Automation and Control Processes of Far Eastern Branch of RAS, Vladivostok, 690041, Radio, 5, Russia
Igor M. Chernev
Institute of Automation and Control Processes of Far Eastern Branch of RAS, Vladivostok, 690041, Radio, 5, Russia
Radek Fajgar
Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojová 135, 165 02 Praha 6, Czech Republic
The Ha Stuchlikova
Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6, Czech Republic
Jiri Stuchlik
Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6, Czech Republic
Zdenek Remes
Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6, Czech Republic
Czech Technical University in Prague, Faculty of Biomedical Engineering, Sitna 3105, 27201 Kladno, Czech Republic

CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

The hydrogenated amorphous silicon (a-Si:H) based p–i–n diode structures Al/a-Si:H(p⁺)/a-Si:H(i)/(silicides NPs/a-Si)_x/a-Si:H(i)/a-Si:H(n⁺)/ITO/glass with multiple layers (x = 8,…,15) of the embedded narrow band semiconducting nanoparticle silicide (CrSi₂, Mg₂Si, and Ca₂Si) multistructures have been grown by combining the plasma enhanced chemical vapour deposition (PECVD) and the UHV reactive deposition epitaxy (RDE). Formation of silicide nanoparticles and multistructures has been confirmed in-situ by the Auger electron spectroscopy (AES) and electron energy loss spectroscopies (EELS) and ex-situ by optical absorbance and Raman spectroscopies. The I–V curves of the a-Si:H p–i–n diodes with embedded silicide NP multistructures have shown the maximal forward current for Ca₂Si nanoparticles. The room temperature electroluminescence has been observed in the near infrared region for diodes with embedded Ca₂Si and Mg₂Si NPs multistructures.

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