Abstract
Resist filling characteristics under a condensable gas ambient in UV nanoimprint lithography are firstly verified by numerical simulation for nanoscale patterns with various resist properties. The resist filling time in condensable gas ambient is compared with that in a vacuum ambient and the result shows that the filling times are almost the same. Also, the filling time for various pattern sizes are investigated. The filling time decreases in proportion to the feature size for a microscale pattern; however, it increases in a nano scale pattern due to the surface tension of the resist. Nevertheless, the resist filling time is sufficiently short for practical use.
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