Photoluminescence Studies of Porous ZnO Nanorods

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Published 22 March 2011 • Copyright (c) 2011 The Japan Society of Applied Physics
, , Citation Min Su Kim et al 2011 Jpn. J. Appl. Phys. 50 035003 DOI 10.1143/JJAP.50.035003

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1 Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea

2 Epi-manufacturing Technology, Samsung LED Co., Ltd., Suwon 443-373, Republic of Korea

3 Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea

4 Department of Physics, Yeungnam University, Gyeongsan 712-749, Republic of Korea

5 Department of Visual Optics, Kyungwoon University, Gumi 730-850, Republic of Korea

Dates

  1. Received 17 November 2010
  2. Accepted 11 December 2010
  3. Published

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Abstract

Porous ZnO nanorods were prepared by thermal annealing at 700 °C in argon atmosphere. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the porous ZnO nanorods. The average diameter and density of the pores formed on the surface of the porous ZnO nanorods are 25 nm and 1.2×1010 cm-2, respectively. Six peaks at 3.380, 3.366, 3.338, 3.267, 3.227, and 3.198 eV, corresponding to free exciton (FX), neutral donor bound exciton (D0X), first-order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, FX-3LO, and FX-4LO emissions, are obtained at low temperature (10 K). The FX emission peak energy of the porous ZnO nanorods exhibits an anomalous behavior as the temperature is increased to 100 K. The activation energy of the porous ZnO nanorods is found to be about 8.6 meV, and the values of fitting parameters to Varshni's empirical equation are α= 6×10-4 eV/K and β= 680 K.

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10.1143/JJAP.50.035003