First Estimation of Power Consumption of KTaxNb1-xO3 Crystal upon Application of High Voltage under High Frequency

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Published 26 November 2013 • Copyright (c) 2013 The Japan Society of Applied Physics
, , Citation Seiji Toyoda et al 2013 Appl. Phys. Express 6 122601 DOI 10.7567/APEX.6.122601

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Author affiliations

1 NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

2 KTN Business Division, NTT Advanced Technology Corporation, Atsugi, Kanagawa 243-0198, Japan

Dates

  1. Received 26 September 2013
  2. Accepted 12 November 2013
  3. Published

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Abstract

We report the power consumption of KTaxNb1-xO3 crystals upon application of a high voltage in the DC to 200 kHz range. The power consumption was 1.2 W at a 200 kHz repetition rate for the employed chip size, which was optimized to obtain large scanning angle. The beam scanning angle deteriorated because the dielectric constant decreased as a result of the heat that was generated when the frequency increased. The beam scanning angle was proportional to the decreased dielectric constant when the frequency increased.

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10.7567/APEX.6.122601