Abstract
Layer transfer via ion-cut has been developed for GaN to fabricate multiple templates from a high-quality GaN wafer without compromising the crystallinity. Here, we report on the successful fabrication of 4-in. layer-transferred GaN on sapphire. A high quality epitaxial layer is also successfully grown despite the structural degradation in the transferred layer by hydrogen implantation. Fully packaged vertical light-emitting diodes grown on the template exhibit the peak external quantum efficiency of 48.6% and optical output power of 1.8 W at 220 A/cm2, suggesting that the template could serve as a low-cost substrate for high-performance nitride devices.