Abstract
We have demonstrated a simple method of directly synthesizing graphene on dielectric surfaces using laser irradiation without a carbon source gas. The position of the graphene synthesis was precisely controlled. Moreover, channels were formed during graphene synthesis by scanning the laser beam across the substrate. The resulting device showed typical ambipolar transport behavior, which indicates that the channel consisted of graphene and that the device acted as a field-effect transistor (FET). Our laser irradiation technique does not require transfer processes and carbon source gases, and is a promising method for graphene synthesis and fabricating graphene FETs.