Abstract
We have demonstrated a novel AlGaN/GaN power switching device with an embedded Schottky barrier diode. The normally-off transistor mode was implemented with a recessed metal–oxide–semiconductor heterostructure field-effect transistor (MOSHFET) configuration in which a Schottky barrier diode (SBD) was embedded to flow the reverse current. The proposed device is very promising for use in high-efficiency converter and inverter ICs. The prototype device exhibited encouraging characteristics: a turn-on voltage of 2 V for the transistor and a forward turn-on voltage of 0.8 V for the embedded diode. The breakdown voltage for the anode-to-cathode distance of 10 µm was 966 V.