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Fabrication of Silicon Oxide Thin Films by Mist Chemical Vapor Deposition Method from Polysilazane and Ozone as Sources

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Published 8 August 2012 Copyright (c) 2012 The Japan Society of Applied Physics
, , Citation Jinchun Piao et al 2012 Jpn. J. Appl. Phys. 51 090201 DOI 10.1143/JJAP.51.090201

1347-4065/51/9R/090201

Abstract

Silicon oxide thin films were grown from the liquid source, polysilazane, by using mist chemical vapor deposition (CVD) at temperatures of 200–350 °C. The films were grown with a reasonable growth rate of 12 nm/min at the temperature of 200 °C, and they showed resistivity of the order of 1013 Ω·cm, although the incorporation of carbon and oxygen remains as a problem to be discussed and solved in the future. The results are encouraging for the future application of mist CVD for the growth of silicon oxide films on plastic substrates.

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