Temperature Analysis of Copper Wire in a Plasma Annealing System at Atmospheric Pressure

In this study, the temperature characteristic of the thin copper wire annealed in atmospheric pressure dielectric barrier discharge (APDBD) system is studied. An equivalent circuit model was used to analyze the wire surface temperature in APDBD. The analysis model showed that the ion bombardment on the wire surface was the main factor that determined wire surface temperature. The average temperature of the thin copper wire in APDBD reactor was calculated as a function of reactor diameter, dielectric material type, applied voltage, ion mass, and gas thermal conductivity. It was, however, shown that applied voltage was the most important parameter to elevate the thin wire temperature up to appropriate annealing temperature. Also, reactor length and carrier speed were crucial for controlling annealing temperature.